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?2002 fairchild semiconductor corporation hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S rev. b1 hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S 600v, smps series n-channel igbts the hgtp12n60a4, hgtg12n60a4 and HGT1S12N60A4S are mos gated high voltage switching devices combining the best features of mosfets and bipolar transistors. these devices have the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on-state voltage drop varies only moderately between 25 o c and 150 o c. this igbt is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. this device has been optimized for high frequency switch mode power supplies. formerly developmental type ta49335. symbol features ? >100khz operation at 390v, 12a 200khz operation at 390v, 9a 600v switching soa capability typical fall time. . . . . . . . . . . . . . . . . 70ns at t j = 125 o c low conduction loss temperature compensating saber? model www.fairchildsemi.com related literature - tb334 ?guidelines for soldering surface mount components to pc boards packaging jedec to-220ab alternate version jedec to-263ab jedec style to-247 ordering information part number package brand hgtp12n60a4 to-220ab 12n60a4 hgtg12n60a4 to-247 12n60a4 HGT1S12N60A4S to-263ab 12n60a4 note: when ordering, use the entire part number. add the suffix 9a to obtain the to-263ab variant in tape and reel, e.g. HGT1S12N60A4S9a c e g g c e collector (flange) g collector (flange) e collector (flange) c e g fairchild corporation igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet august 2002
?2002 fairchild semiconductor corporation hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S rev. b1 absolute maximum ratings t c = 25 o c, unless otherwise specified hgtg12n60a4, hgtp12n60a4, HGT1S12N60A4S units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .bv ces 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 54 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .c11 0 23 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 96 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gem 30 v switching safe operating area at t j = 150 o c, figure 2 . . . . . . . . . . . . . . . . . . . . . . . . ssoa 60a at 600v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 167 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c maximum lead temperature for soldering leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l package body for 10s, see tech brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t pkg 300 260 o c o c caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: 1. pulse width limited by maximum junction temperature. electrical specifications t j = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v emitter to collector breakdown voltage bv ecs i c = 10ma, v ge = 0v 15 - - v collector to emitter leakage current i ces v ce = 600v t j = 25 o c - - 250 a t j = 125 o c--2.0ma collector to emitter saturation voltage v ce(sat) i c = 12a, v ge = 15v t j = 25 o c-2.02.7v t j = 125 o c-1.62.0v gate to emitter threshold voltage v ge(th) i c = 250 a, v ce = 600v - 5.6 - v gate to emitter leakage current i ges v ge = 20v - - 250 na switching soa ssoa t j = 150 o c, r g = 10 ?, v ge = 15v l = 100 h, v ce = 600v 60 - - a gate to emitter plateau voltage v gep i c = 12a, v ce = 300v - 8 - v on-state gate charge q g(on) i c = 12a, v ce = 300v v ge = 15v - 78 96 nc v ge = 20v - 97 120 nc current turn-on delay time t d(on)i igbt and diode at t j = 25 o c i ce = 12a v ce = 390v v ge =15v r g = 10 ? l = 500 h test circuit (figure 20) -17 - ns current rise time t ri -8 - ns current turn-off delay time t d(off)i -96 - ns current fall time t fi -18 - ns turn-on energy (note 3) e on1 -55 - j turn-on energy (note 3) e on2 - 160 - j turn-off energy (note 2) e off -50 - j hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S
?2002 fairchild semiconductor corporation hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S rev. b1 current turn-on delay time t d(on)i igbt and diode at t j = 125 o c i ce = 12a v ce = 390v v ge = 15v r g = 10 ? l = 500 h test circuit (figure 20) -17 - ns current rise time t ri -16 - ns current turn-off delay time t d(off)i - 110 170 ns current fall time t fi -7095ns turn-on energy (note 3) e on1 -55 - j turn-on energy (note 3) e on2 - 250 350 j turn-off energy (note 2) e off - 175 285 j thermal resistance junction to case r jc - - 0.75 o c/w notes: 2. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. 3. values for two turn-on loss conditions are shown for the convenience of the circuit designer. e on1 is the turn-on loss of the igbt only. e on2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same t j as the igbt. the diode type is specified in figure 20. electrical specifications t j = 25 o c, unless otherwise specified (continued) parameter symbol test conditions min typ max units typical performance curves unless otherwise specified figure 1. dc collector current vs case temperature figure 2. minimum switching safe operating area figure 3. operating frequency vs collector to emitter current figure 4. short circuit withstand time t c , case temperature ( o c) i ce , dc collector current (a) 50 10 0 40 20 30 25 75 100 125 150 60 50 v ge = 15v v ce , collector to emitter voltage (v) 700 40 0 i ce , collector to emitter current (a) 10 20 300 400 200 100 500 600 0 50 60 30 70 t j = 150 o c, r g = 10 ? , v ge = 15v, l = 200 h t c v ge 15v 75 o c f max , operating frequency (khz) 1 i ce , collector to emitter current (a) 10 3 300 30 10 20 500 f max1 = 0.05 / (t d(off)i + t d(on)i ) r ?jc = 0.75 o c/w, see notes p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on2 + e off ) t j = 125 o c, r g = 10 ? , l = 500 h, v ce = 390v 100 v ge , gate to emitter voltage (v) i sc , peak short circuit current (a) t sc , short circuit withstand time ( s) 9101112 15 0 2 10 16 50 125 175 300 t sc i sc 20 250 13 14 4 6 8 12 14 18 75 100 150 200 225 275 v ce = 390v, r g = 10 ? , t j = 125 o c hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S
?2002 fairchild semiconductor corporation hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S rev. b1 figure 5. collector to emitter on-state voltage figure 6. collector to emitter on-state voltage figure 7. turn-on energy loss vs collector to emitter current figure 8. turn-off energy loss vs collector to emitter current figure 9. turn-on delay time vs collector to emitter current figure 10. turn-on rise time vs collector to emitter current typical performance curves unless otherwise specified (continued) 00.51.0 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 4 8 1.5 2 2.5 16 20 12 t j = 125 o c t j = 150 o c pulse duration = 250 s duty cycle < 0.5%, v ge = 12v 24 t j = 25 o c i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) duty cycle < 0.5%, v ge = 15v pulse duration = 250 s t j = 150 o c t j = 25 o c t j = 125 o c 0 0.5 1.0 1.5 2 2.5 4 8 16 12 20 24 0 e on2 , turn-on energy loss ( j) 500 300 i ce , collector to emitter current (a) 400 200 600 0 700 6 4 10121416 818202224 t j = 125 o c, v ge = 12v, v ge = 15v r g = 10 ? , l = 500 h, v ce = 390v t j = 25 o c, v ge = 12v, v ge = 15v 100 2 300 i ce , collector to emitter current (a) e off , turn-off energy loss ( j) 0 50 200 100 250 350 400 t j = 25 o c, v ge = 12v or 15v t j = 125 o c, v ge = 12v or 15v 150 6 4 2 10121416 8 18202224 r g = 10 ? , l = 500 h, v ce = 390v i ce , collector to emitter current (a) t d(on)i , turn-on delay time (ns) 10 11 12 13 14 15 6 4 2 10121416 8 18202224 16 17 18 t j = 25 o c, t j = 125 o c, v ge = 15v t j = 25 o c, t j = 125 o c, v ge = 12v r g = 10 ? , l = 500 h, v ce = 390v i ce , collector to emitter current (a) t ri , rise time (ns) 0 4 16 12 8 6 4 2 10121416 818202224 20 32 28 24 r g = 10 ? , l = 500 h, v ce = 390v t j = 125 o c, or t j = 25 o c, v ge = 12v t j = 25 o c or t j = 125 o c, v ge = 15v hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S
?2002 fairchild semiconductor corporation hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S rev. b1 figure 11. turn-off delay time vs collector to emitter current figure 12. fall time vs collector to emitter current figure 13. transfer characteristic figure 14. gate charge waveforms figure 15. total switching loss vs case temperature figure 16. total switching loss vs gate resistance typical performance curves unless otherwise specified (continued) 48 2 95 6 85 90 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 12 115 16 14 105 110 10 100 v ge = 12v, v ge = 15v, t j = 25 o c v ge = 12v, v ge = 15v, t j = 125 o c r g = 10 ? , l = 500 h, v ce = 390v 18 20 22 24 i ce , collector to emitter current (a) t fi , fall time (ns) 10 30 20 50 70 40 60 r g = 10 ? , l = 500 h, v ce = 390v t j = 25 o c, v ge = 12v or 15v t j = 125 o c, v ge = 12v or 15v 48 26 1216 14 10 18 20 22 24 80 90 i ce , collector to emitter current (a) 0 50 100 13 7 8 9 10 12 v ge , gate to emitter voltage (v) 11 150 200 14 15 250 6 pulse duration = 250 s duty cycle < 0.5%, v ce = 10v 16 t j = 125 o c t j = -55 o c t j = 25 o c v ge , gate to emitter voltage (v) q g , gate charge (nc) 2 14 0 4 10 i g(ref) = 1ma, r l = 25 ? , t c = 25 o c v ce = 200v v ce = 400v 6 8 12 16 v ce = 600v 10 20 30 40 60 50 70 80 0 i ce = 24a i ce = 12a i ce = 6a 0 0.2 0.4 50 75 100 t c , case temperature ( o c) 0.6 1.0 125 25 150 1.2 0.8 e total , total switching energy loss (mj) e total = e on2 + e off r g = 10 ? , l = 500 h, v ce = 390v, v ge = 15v 0.1 10 100 r g , gate resistance ( ? ) 1 51000 e total , total switching energy loss (mj) i ce = 12a i ce = 24a i ce = 6a 10 t j = 125 o c, l = 500 h, v ce = 390v, v ge = 15v e total = e on2 + e off hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S
?2002 fairchild semiconductor corporation hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S rev. b1 figure 17. capacitance vs collector to emitter voltage figure 18. collector to emitter on-state voltage vs gate to emitter voltage figure 19. igbt normalized transient thermal response, junction to case test circuit and waveforms figure 20. inductive switching test circuit figure 21. switching test waveforms typical performance curves unless otherwise specified (continued) v ce , collector to emitter voltage (v) c, capacitance (nf) c res 0 5 10 15 20 25 0 0.5 1.0 2.0 2.5 3.0 1.5 frequency = 1mhz c oes c ies v ge , gate to emitter voltage (v) 89 1.9 10 12 2.0 2.2 2.1 11 13 14 15 16 2.3 2.4 v ce , collector to emitter voltage (v) i ce = 18a i ce = 12a i ce = 6a duty cycle < 0.5%, v ge = 15v pulse duration = 250 s, t j = 25 o c t 1 , rectangular pulse duration (s) z jc , normalized thermal response 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 t 1 t 2 p d duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c single pulse 0.1 0.2 0.5 0.05 0.01 0.02 r g = 10 ? l = 500 h v dd = 390v + - rhrp660 t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on2 hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S
?2002 fairchild semiconductor corporation hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S rev. b1 handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler ? s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ? eccosorbd ? ld26 ? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open- circuited or floating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 5, 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 21. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . f max2 is defined by f max2 = (p d - p c )/(e off + e on2 ). the allowable dissipation (p d ) is defined by p d = (t jm - t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on2 and e off are defined in the switching waveforms shown in figure 21. e on2 is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). hgtp12n60a4, hgtg12n60a4, HGT1S12N60A4S

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